2n3055 transistor3/9/2023 ![]() ![]() ![]() Power dissipation 25☌ DC current gain hFE 4 A VCE( Sat) 1.1 V (Maximum) 400 mA Designed for use general-purpose amplifier and low - frequency switching applicationsġ5 Amperes Complementary Silicon Power Transistors 60 Volts 115 WattsĬharacteristic Collector - emitter voltage Collector - emitter voltage Collector - base voltage Emitter - base voltage Collector current - continuous Base current Total power dissipation = 25☌ Derate above 25☌ Operating and storage junction temperature range Symbol VCEO VCBR VCBO VEBO IB PD TJ, TSTG Rating A W W/☌ ☌ V UnitĬharacteristic Thermal resistance junction to case Figure-1 Power Derating PD, Power Dissipation (Watts) Symbol Rjc Maximum 1.52 Unit ☌/W
0 Comments
Leave a Reply.AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |